Electrostatic Chuck
Overview
These electrostatic chucks are designed to hold silicon wafers and keep them flat, enabling the wafers to evenly dissipate heat received from the plasma. Fullchance electrostatic chucks feature excellent strength, thermal conductivity and thermal shock resistance, and can accommodate a wide temperature range thanks to Fullchance proprietary volume resistivity control technology. Fullchance offers aluminum nitride (AlN) and aluminum oxide (Al₂O₃) materials suitable for this application.
Advantages
Wide operating temperature range (-50~700℃)
These electrostatic chucks feature excellent strength, thermal conductivity and thermal shock resistance. Thanks to Fullchance proprietary ceramic volume resistivity control technology, they can operate across a broad temperature range.
High corrosion resistance
These electrostatic chucks deliver outstanding corrosion resistance against halogen gases.
Low‑particle processing
Low‑particle processing is achieved via surface treatment and special cleaning procedures.
High purity
Purity can reach 99.9% or higher.
Heating function
High‑precision heating element embedding technology enables integration with heater functions, with wafer temperature controllable within ±1%.
Cooling function
These electrostatic chucks offer superior cooling performance by bonding high‑thermal‑conductivity ceramic plates to cooling plates.
RF Electrode
The bulk metal electrode provides stable wafer clamping and RF plasma generation simultaneously
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Size
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Compatible with 200, 300 and 450 mm wafers
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Chuck mechanism
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Fullchance (AlN), (Al₂O₃)
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Electrode shape
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Unipolar / Bipolar
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Aluminum Nitride Material Properties
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Aluminum Nitride
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HA-12
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HA-37/38
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HA-50/51
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| purity | （%） | 95 | 99 | 99 |
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Density
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[g/cm³]
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3.3 | 3.3 | 3.3 |
| Volume resistivity | [Ωcm](RT) | >1E+15 | 1E+8〜+13 | >1E+15 |
| Thermal conductivity | [W/mK](RT) | 170 | 100 | 80 |
| coefficient of thermal expansion | （RT） | 5.7(1000℃) | 5.6(1000℃) | 5.6(1000℃) |
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Strength
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[MPa] (Room Temperature)
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>300 | >300 | >250 |
| Young's modulus | [GPa](RT) | 300 | 300 | 300 |
| dielectric constant | (13.56MHz、RT) | 8.6 | 8.8 | 8.6 |
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