Overview
These heaters are designed to support and heat silicon wafers. Fabricated from aluminum nitride (AlN) with excellent thermal
conductivity, they are co‑sintered with resistive heating elements to deliver superior thermal uniformity and mitigate metallic
contamination.
conductivity, they are co‑sintered with resistive heating elements to deliver superior thermal uniformity and mitigate metallic
contamination.
Advantages
Excellent thermal uniformity and wide operating temperature range
These heaters are made of high‑thermal‑conductivity material (AlN), delivering outstanding thermal uniformity over a broad temperature range (up to 800 degrees Celsius).
Compact
Resistive heating elements and bulk RF electrodes are co‑sintered in AlN ceramics, with the ceramic shaft directly bonded to the heating plate.
High corrosion resistance
These heaters feature exceptional corrosion resistance to halogen gases and oxidizing environments.
Wafer chucking function
RF electrodes are co‑sintered into the ceramic plate. These electrodes can serve as electrostatic chuck electrodes for wafer chucking.
Specifications
Specifications
|
Size
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Compatible with 200, 300 and 450 mm wafers
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|
Power Supply
|
100‑200 V × 15‑50 A
|
|
Electrode
|
Nickel rods/cables are attached to terminals by brazing or screw fastening
|
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Material
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Aluminum Nitride
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Properties
Aluminum Nitride
High purity (~99.9%)
High thermal conductivity (~170W/mK)
High corrosion resistance and plasma resistance
[Products]
Shafts, Receiving Rings
Aluminum Oxide
High purity (~99.9%)
High corrosion resistance and plasma resistance
Complex shapes
Large‑size forms
[Products]
O‑rings
customer service1 