Overview
BN is available in multiple forms, including powders, coatings, pastes, aerosols, and hot‑pressed solids.
Hot‑pressed boron nitride features a graphite‑like hexagonal structure.
Although HPBN is an insulator, it delivers outstanding performance in terms of temperature resistance, dielectric constant, thermal shock resistance, and
thermal conductivity.
thermal conductivity.
It can also be easily machined into complex shapes without post‑firing. Hot‑pressed boron nitride is powder sintered at temperatures above 2000 degrees
Celsius. Depending on the manufacturing process, multiple grades are available to meet your requirements. These range from ultra‑high‑temperature
high‑vacuum grades with no binders for thermal extraction, to moisture‑resistant grades using calcium borate
glass as a binder. HPBN offers grades suitable for most applications.
Celsius. Depending on the manufacturing process, multiple grades are available to meet your requirements. These range from ultra‑high‑temperature
high‑vacuum grades with no binders for thermal extraction, to moisture‑resistant grades using calcium borate
glass as a binder. HPBN offers grades suitable for most applications.
St. Berlin supplies not only boron nitride and composite materials, but also Mykroy, aluminum silicate, Macor, alumina, silicon nitride, zirconia, and
aluminum nitride.
aluminum nitride.
Properties
• High resistivity
• High‑temperature resistant material
• Corrosion resistance
• Excellent lubricating performance
• Superior thermal shock resistance
• Good chemical inertness
• High dielectric strength
• High thermal conductivity
• Low density
• Non‑wetting
• Good machinability
Application Fields
• High‑voltage electrical insulators
• Heat‑treatment insulators and fixtures
• Break rings for continuous metal casting
• Crucibles for high‑purity molten metals
• High‑temperature lubricants
• High‑temperature valves
• Atomizing nozzles
• Refractory material applications
• PVD insulators and shielding layers
• Insulating supports
• Vacuum furnace supports
Pyrolytic Boron Nitride
PBN is a ceramic manufactured via chemical vapor deposition, which endows this material with highly unique properties. It is inherently pure and
ideal for furnaces, electrical components, microwave, and semiconductor applications.
ideal for furnaces, electrical components, microwave, and semiconductor applications.
Industry‑standard crucibles such as VGF, LEC, and Bridgman crucibles for gallium arsenide crystal production, as well as auxiliary jet pool hardware.
PBN/PG heaters also provide extremely uniform temperature distribution for compound and semiconductor manufacturing. PBN has bulk impurity
levels below 100 ppm and metallic impurity levels below 10 ppm, and therefore does not react with acids, alkalis, organic solvents, molten metals,
or graphite.
Specifications
mechanical properties
PBN/PG heaters also provide extremely uniform temperature distribution for compound and semiconductor manufacturing. PBN has bulk impurity
levels below 100 ppm and metallic impurity levels below 10 ppm, and therefore does not react with acids, alkalis, organic solvents, molten metals,
or graphite.
Specifications
|
Crystal Phase
|
Not Applicable
|
|
Binder Phase / Binder Type
|
Chemical Vapor Deposition Process
|
|
Color
|
Cream
|
|
Typical Applications
|
Demanding applications requiring optimal purity
|
|
Directionality
|
Air‑conditioning Direction
|
mechanical properties
| Flexural Strength | 27,500 psi |
| Young's Modulus | Not Applicable |
| Real‑Time Compression | 3700 Direction A 48,000 Direction C Unit PSI |
| Open Cell Content | 0 |
| Density (kg/m³) | 1.95‑2.19 |
| Knoop Hardness (kg/mm²) | Not Applicable |
| thermal performance | |
| Thermal Conductivity @ 25°C W/mK | 0.25"A"/0.004"C" |
| Coefficient of thermal expansion (10⁻⁶) | |
| 25°C – 400°C | Not applicable |
| 400°C – 800°C | 0.001“A”/0.013“C” |
| 800°C – 1200°C | Not applicable |
| 1200°C – 1600°C | 0.0025“A”/0.27“C” |
| Specific Heat @ 25°C J/gK | 0.2 cal/g·°C 0.2 cal/g·°C |
| Maximum Temperature Oxidizing/Inert | 1900 |
| Electrical Characteristics | |
| Dielectric Constant @ 1 MHz | "C" 3.7 |
| Dissipation Factor @ 1 MHz | Not Applicable |
| Dielectric Strength kV/mm | "C" 230 |
| RT Resistivity (Ω·cm) | 1×10¹⁵ |
| Dielectric Constant a@1 MHz | "C" 3.7 |
| Dissipation Factor @ 1 MHz | Not Applicable |
| Dielectric Strength kV/mm | "C" 230 |
| RT Resistivity (Ω·cm) | 1×10¹⁵ |
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