Heating and Temperature Solutions for Rapid Thermal Processing (RTP) and Rapid Thermal Annealing (RTA)
In the semiconductor industry, there are numerous methods for depositing coatings onto wafers. These coatings then require post‑treatment for
activation and modification, as well as to release material stress and improve thin‑film properties. Rapid Thermal Processing (RTP) and Rapid
Thermal Annealing (RTA) are employed for this purpose, involving highly controlled heating and cooling of wafers. During these processes, the
thermal exposure of wafers must be kept to a minimum, also referred to as thermal budget.
This becomes even more critical as device geometries continue to shrink. Kamet’s Mineral‑Insulated (MI) high‑temperature ("exotic") thermocouples
play a key role in closely monitoring operating temperatures, while our mineral‑insulated heating elements enable precise temperature control.
RTP and RTA
The development of Rapid Thermal Processing (RTP) aims to minimize wafer exposure to excessive thermal energy by designing the shortest possible
process times. Rapid heating is achieved through infrared lamps, halogen lamps, lasers or electric heaters. The three main application areas of RTP are:
1. Activation process: the process of converting semiconductors into conductive materials. In this process, impurities are implanted into transistors and
activated or moved to desired positions using high temperatures within a short period of time.
2. Material modification process: formation of transistor contacts. When fabricating transistor contacts, RTP is used to convert materials (such as
nickel‑platinum) into more robust nickel monosilicide with lower resistance, which helps improve contact performance.
3. Improving thin‑film properties. In this scenario, RTP can be applied to densify thin films, making them more robust and enhancing device performance.
Rapid Thermal Annealing (RTA) is a specific type of RTP used to modify the electrical characteristics of wafers.
For these processes, extremely high temperatures are required to achieve satisfactory results. However, wafers cannot be exposed to high temperatures
for extended periods for various reasons (for instance, this would cause dopants to diffuse excessively wide). At present, typical spike annealing for dopant
activation lasts no more than several seconds.
What heating and temperature solutions does Kamet provide for RTP and RTA?
Precise temperature measurement and control are highly challenging in Rapid Thermal Processing (RTP) and Rapid Thermal Annealing (RTA). Kamet offers
custom components to support both aspects of this critical process.
• Our high‑temperature thermocouples are specially engineered to deliver fast response times and accurate measurements under harsh conditions.
• Our Mineral‑Insulated (MI) wafer heaters are used for uniform heating of wafers in RTP systems. Our MI heaters can rapidly heat up to 1000°C and operate
at normal voltage levels (120V – 230V) as well as specific low‑voltage levels, eliminating the need for electrical converters.
• Micro heaters serve as compact custom heating solutions designed for PVD.
Kamet’s thermocouple and heater designs are fully customizable to suit each specific application environment.
What are the advantages of using high‑temperature thermocouples for RTP and RTA?
Extremely accurate readings can be obtained even at high temperatures.
Correctly calibrate the pyrometer.
Fast response time.
Full customization of thermocouples and mineral‑insulated sheaths ensures a perfect match for the harshest environments.
Helps improve process reproducibility.
Thin‑film thermocouples on wafers can measure temperatures across the entire surface without the heat transfer that occurs with wire thermocouples.
Cost‑effective solution.
Bendable to fit complex spaces.
Our long‑term partner ceramic supplier has 20 years of experience and delivers top‑tier quality.
Non‑destructive testing is provided to ensure additional quality assurance.